SAMSUNG 990 EVO Plus Internal SSD, 4TB Capacity, PCIe Gen 4.0 x4 / 5.0 x2 NVMe 2.0 Interface, Up to 7,250 MB/s Read & 6,300 MB/s Write Support, V-NAND TLC | MZ-V9S4T0BW
- Availability:
- In Stock
- Product Code:
- 990 EVO Plus
- Brand:
- Samsung
QAR 1,186.93
QAR 1,088.02
You save QAR 98.91
990 EVO Plus
Specifications
Model Code (Capacity) | MZ-V9S4T0BW (4TB) |
General Features | |
Application | Client PCs |
Form Factor | M.2 (2280) |
Interface | PCIe® Gen 4.0 x4 / 5.0 x2 NVMe™ 2.0 |
Dimension (WxHxD) | 80.15 x 22.15 x 2.38mm |
Weight | Max 9.0g |
Storage Memory | Samsung V-NAND TLC |
Controller | Samsung in-house Controller |
Cache Memory | HMB (Host Memory Buffer) |
Special Features | |
TRIM Support | Supported |
S.M.A.R.T Support | Supported |
GC (Garbage Collection) | Auto Garbage Collection Algorithm |
Encryption Support | AES 256-bit Encryption (Class 0), TCG/Opal, IEEE1667 (Encrypted Drive) |
WWN Support | Not Supported |
Device Sleep Mode Support | Yes |
Performance | |
Sequential Read | Up to 7,250 MB/s |
Sequential Write | Up to 6,300 MB/s |
Random Read (4KB, QD32) | Up to 1,050,000 IOPS |
Random Write (4KB, QD32) | Up to 1,400,000 IOPS |
Environment | |
Average Power Consumption | Read 5.5W / Write 4.8W |
Power Consumption (Idle) | Typical 60mW for all capacities |
Power Consumption (Sleep) | Typical 5mW for all capacities |
Allowable Voltage | 3.3V ± 5% |
Reliability (MTBF) | 1.5 Million Hours |
Operating Temperature | 0 - 70°C |
Shock Resistance | 1,500 G & 0.5 ms (Half sine) |
General
Brand
- Samsung
Model
- 990 EVO Plus
Microless SKU
- 224350
Date first available
- 24 December, 2024
Shipping Weight
- 0.10 Kg
Shipping Dimensions
- 2.00 cm x 10.00 cm x 14.51 cm
Form Factor
- M.2
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