IXFK94N50 N-channel mosfet cabutan |

Description:

Type Designator: IXFK74N50P2

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 1400 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 74 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 165 nC

Rise Time (tr): 250 nS

Maximum Drain-Source On-State Resistance (Rds): 0.077 Ohm

Package: TO264

Kit include:

1 x IXFK94N50 N-channel mosfet cabutan

Documents:

DataSheet